M474B1G73BH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
Details
Memory Capacity:
8 GB
Memory Technology:
DDR3 SDRAM
Product Voltage:
1.35V
RAM Speed:
1333 MHz
RAM Standard:
DDR3-1333/PC3-10600
Error Identifying:
ECC
Signal Type:
Unbuffered
Column Access Strobe (CAS):
CL9
Rank:
Dual Rank x8
Quantity of Pins:
204-pin
RAM Genre:
SoDIMM
Eco Friendly:
Yes
Compliance Standards:
EU RoHS,FCC
Assembly Required:
Yes