MT16JTF51264HZ-1G4H1 - Micron - Technology 4GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
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MT16JTF51264HZ-1G4H1 - Micron - Technology 4GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
$97.40
SKU:
MT16JTF51264HZ-1G4H1
Availability:
In Stock
Weight:
2.00 LBS
Shipping:
Calculated at Checkout
MT16JTF51264HZ-1G4H1 - Micron - Technology 4GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
Details
Memory Capacity:
4 GB
Memory Technology:
DDR3 SDRAM
Product Voltage:
1.35 V DC
RAM Speed:
1600 MHz
RAM Standard:
DDR3-1600/PC3-12800
Column Access Strobe (CAS):
CL11
Rank:
Dual
Signal Type:
Unbuffered
RAM Genre:
SoDIMM
Quantity of Pins:
204-pin
Eco Friendly:
Yes
Compliance Standards:
RoHS
Assembly Required:
Yes
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