M474B1G73BH0YH9 - Samsung - 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
Write a Review
Write a Review
Samsung
M474B1G73BH0YH9 - Samsung - 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
$476.75
$387.60
(You save
$89.15
)
SKU:
M474B1G73BH0YH9
Availability:
In Stock
Weight:
2.00 LBS
Shipping:
Calculated at Checkout
M474B1G73BH0YH9 - Samsung - 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
Related Products
M474B1G73BH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
M474B1G73BH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
$463.39
$376.74
MT18KSF1G72HZ-1G4J1 - Micron - 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
MT18KSF1G72HZ-1G4J1 - Micron - 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
$476.75
$387.60
M471B1G73QH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz non-ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
M471B1G73QH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz non-ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
$384.36
$312.49
M471B1G73BH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz non-ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
M471B1G73BH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz non-ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
$384.36
$312.49
M474B1G73QH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
M474B1G73QH0-YH9 - Samsung - 8GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
$278.04
$226.05