M471B51736QH0-YK0 - Samsung - 4GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Single Rank Memory
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Samsung
M471B51736QH0-YK0 - Samsung - 4GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Single Rank Memory
$78.22
SKU:
M471B51736QH0-YK0
Availability:
In Stock
Weight:
2.00 LBS
Shipping:
Calculated at Checkout
M471B51736QH0-YK0 - Samsung - 4GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Single Rank Memory
Details
Package Quantity:
1
Memory Technology:
DDR3 SDRAM
RAM Speed:
1600 MHz
Signal Type:
Unbuffered
Memory Capacity:
4 GB
Product Voltage:
1.35V
RAM Standard:
DDR3-1600/PC3-12800
Column Access Strobe (CAS):
CL11
Rank:
Single Rank x8
Quantity of Pins:
204-pin
RAM Genre:
SoDIMM
Eco Friendly:
Yes
Compliance Standards:
EU RoHS,FCC
Assembly Required:
Yes
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